GaN Systems Releases Highest Power Density 3kW LLC Reference Design for Power Applications
GaN Systems Releases Highest Power Density 3kW LLC Reference Design for Power Applications
OTTAWA, Ontario, May 4, 2021 - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications.
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Key Takeaways:
- GaN Systems introduced a high density, high efficiency GaN-based 3kW LLC Resonant Converter reference design.
- Design is aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial SMPS applications.
- The full-bridge LLC resonant converter design, integrating GaN Systems' 650 V E-mode transistors, exceeds the 80 PLUS Titanium standard for power supply units.
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Contacts:
Mary Placido
4152183627
Source: GaN Systems
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