Industries News.Net

GaN Systems Releases Highest Power Density 3kW LLC Reference Design for Power Applications


Reportable
4 May 2021

GaN Systems Releases Highest Power Density 3kW LLC Reference Design for Power Applications

OTTAWA, Ontario, May 4, 2021 - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today introduced a new reference design for a high density, high efficiency GaN-based 3kW LLC Resonant Converter (GS-EVB-LLC-3KW-GS) aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial switching mode power supply (SMPS) applications.

To view the full announcement, including downloadable images, bios, and more, click here.

Key Takeaways:

  • GaN Systems introduced a high density, high efficiency GaN-based 3kW LLC Resonant Converter reference design.
  • Design is aimed to reduce design cycles, costs, and time to market for companies developing data center, telecom, and industrial SMPS applications.
  • The full-bridge LLC resonant converter design, integrating GaN Systems' 650 V E-mode transistors, exceeds the 80 PLUS Titanium standard for power supply units.

Click image above to view full announcement.

Contacts:

Mary Placido

4152183627

mary@triercompany.com

Source: GaN Systems

Distributed by: Reportable, Inc.

Copyright ©1998-2021 Industries News.Net | Mainstream Media Limited - All rights reserved